User manual THOMSON STP6NA60FI

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Manual abstract: user guide THOMSON STP6NA60FI

Detailed instructions for use are in the User's Guide.

 [. . . ] STP6NA60 STP6NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP6NA60 STP6NA60FI
s s s s s s s

V DSS 600 V 600 V

R DS( on) < 1. 2  < 1. 2 

ID 6. 5 A 3. 9 A

TYPICAL RDS(on) = 1  ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220

3 1 2 1 2

3

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge,  unequalled ruggedness and superior switching performance.  [. . . ] 6. 5 26 1. 6 Unit A A V ns µC A

() Pulsed: Pulse duration = 300 µs,  duty cycle 1. 5 % (·) Pulse width limited by safe operating area

Safe Operating Areas for TO-220

Safe Operating Areas for ISOWATT220

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STP6NA60/FI

Thermal Impedeance For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For TO-220

Derating Curve For ISOWATT220

Output Characteristics

Transfer Characteristics

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STP6NA60/FI

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature

Normalized On Resistance vs Temperature

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STP6NA60/FI

Turn-on Current Slope

Turn-off Drain-source Voltage Slope

Cross-over Time

Switching Safe Operating Area

Accidental Overload Area

Source-drain Diode Forward Characteristics

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STP6NA60/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 2: Unclamped Inductive Waveforms

Fig. 3: Switching Times Test Circuits For Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time

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TO-220 MECHANICAL DATA
DIM. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13. 0 2. 65 15. 25 6. 2 3. 5 3. 75 0. 49 0. 61 1. 14 1. 14 4. 95 2. 4 10. 0 16. 4 14. 0 2. 95 15. 75 6. 6 3. 93 3. 85 0. 511 0. 104 0. 600 0. 244 0. 137 0. 147 4. 40 1. 23 2. 40 1. 27 0. 70 0. 88 1. 70 1. 70 5. 15 2. 7 10. 40 0. 019 0. 024 0. 044 0. 044 0. 194 0. 094 0. 393 0. 645 0. 551 0. 116 0. 620 0. 260 0. 154 0. 151 mm TYP. 0. 173 0. 048 0. 094 0. 050 0. 027 0. 034 0. 067 0. 067 0. 203 0. 106 0. 409 inch TYP. 0. 181 0. 051 0. 107

A

C

D1

L2 F1

D

G1

E

Dia. F2 F

L5 L7 L6

L9

L4

G

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H2

P011C

STP6NA60/FI

ISOWATT220 MECHANICAL DATA
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28. 6 9. 8 15. 9 9 3 4. 4 2. 5 2. 5 0. 4 0. 75 1. 15 1. 15 4. 95 2. 4 10 16 30. 6 10. 6 16. 4 9. 3 3. 2 1. 126 0. 385 0. 626 0. 354 0. 118 mm TYP. 4. 6 2. 7 2. 75 0. 7 1 1. 7 1. 7 5. 2 2. 7 10. 4 MIN.  [. . . ] SGS-THOMSON Microelectronics products are not authorized for use as critical compone in life support devices or systems without express nts written approval of SGS-THOMSON Microelectonics. © 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U. S. A . 

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